Body effect

Structure of a planar n-channel MOSFET device (4 terminals).

The body effect (also known as substrate bias effect) is an undesired second-order effect present in field-effect transistors (MOSFET) that describes the change in transistor's threshold voltage () resulting from a potential difference between the source and the bulk (substrate) terminals. While ideal first-order MOSFET models assume that the source and bulk are tied to the same potential, in many integrated circuit topologies the source voltage varies dynamically while the substrate is kept at a global reference potential. This voltage difference alters the internal electrostatic balance of the device, strongly modifying the device biasing condition, switching characteristics and amplification capabilities.

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